After more than four years, Samsung has announced that it already has the first 8Gb LPDDR5 RAM memory chips , a transition from standard LPDDR4 which proposes significant improvements both in the section on performance like that of the energy efficiency . Optimizations that we could enjoy for the first time in smartphones like the Samsung Galaxy S10 at the beginning of next year.
Samsung is prepared to support new generation smartphones, those in which the Artificial intelligence will take special prominence, as well as the 5G connectivity . Technologies that will demand greater performance at a general level, and not only by the processor. This is what the South Korean firm tells us, which has already completed the testing and development phase of the first 8 Gb LPDDR5 memory chips to make way for the mass manufacture of 8GB RAM modules that, in all probability, would release the Samsung Galaxy S10 in 2019.
What new features will the LPDDR5 memory bring in mobile?
Samsung has offered details about him manufacturing process and structure of the new RAM memory LPDDR5 . A standard that reaches the smartphone sector to offer a more interesting evolution than the current ones LPDDR4 memories .
And is that this kind of LPDDR or Low Power DDR SDRAM memory chips , optimized to offer low energy consumption with respect to other standards such as the GDDR5 and GDDR6, reach their best values with the implementation of the LPDDR5 standard. If in 2014 the previous generation already proposed a 50% higher performance and a 40% lower energy consumption than the LPDDR3 memories, the arrival of the LPDDR5 RAM memory offers a similar evolution with a gain of 50% of the yield and a reduction of the electrical consumption of 30% .
In numbers, Samsung points out that the 10-nanometer-class LPDDR5 memory (manufacturing process between 10 and 20 nanometers) is capable of reaching a No band up to 51.2 GB thanks to which these chips can reach Data transfer speeds of up to 6,400 Mbps.
More speed, and also less energy consumption
However, the greatest technological evolution lies in the internal architecture of the chip, which now has twice as many memory banks as it goes from eight to 16. In the same way, several solutions have been designed aimed at reduce energy expenditure . On the one hand, there is a controller that allows to reduce the voltage received by the chip. With 1.1 volts, the memory offers speeds of Up to 6,400 Mbps . With 1.05 volts, the value drops up to 5,500 Mbps . It is the processor’s own controller that manages the voltage at all times to adapt the performance and energy consumption according to the operating system’s requirements.
This, added to the configuration that avoids the overwriting of cells “0” and an optimized inactive mode “More aggressive” that reduces consumption by 50% compared to the previous “Deep Sleep” mode of the LPDDR4 memory, makes the LPDDR5 memory much more efficient.
LPDDR5, the RAM of the Samsung Galaxy S10
The result, as we were advancing, is a memory module of 8 GB of RAM thanks to the fusion of eight 8 Gb LPDDR5 memory chips adapted to the new demands of artificial intelligence and the future generation of 5G networks.
It is expected that these RAM modules will be mass-produced in the signature factories when Samsung customers demand it. Given this perspective, it is not surprising that Samsung itself is the first to release this 8GB RAM chip on the Samsung Galaxy S10, in which we also hope that the internal memory will be introduced for the first time UFS 3.0 technology .